THEORETICAL-STUDY OF HIGH-PRESSURE ORTHORHOMBIC SILICON

被引:45
|
作者
LEWIS, SP
COHEN, ML
机构
[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720
[2] LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 21期
关键词
D O I
10.1103/PhysRevB.48.16144
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ab initio calculations of the structural properties of a recently discovered body-centered orthorhombic phase of Si are presented. This high-pressure phase (denoted Imma after its space group) was observed at pressures between the transition pressures for the beta-Sn and simple hexagonal (sh) phases of Si. Total-energy calculations indicate that the optimal Imma structure varies with cell volume from the beta-Sn structure at large volumes to the sh structure at small volumes when all three structures are described in terms of the Imma unit cell. The energy of the Imma phase is found to be lower than or equal to the energies of the beta-Sn and sh phases for all cell volumes.
引用
收藏
页码:16144 / 16147
页数:4
相关论文
共 50 条
  • [21] The stability of the linear orthorhombic polymer of C60:: A high-pressure study
    Meletov, KP
    Davydov, VA
    Rakhmanina, AV
    Kourouklis, GA
    FULLERENES NANOTUBES AND CARBON NANOSTRUCTURES, 2006, 14 (2-3) : 421 - 424
  • [22] HIGH-PRESSURE SYNTHESIS OF ORTHORHOMBIC SNO2
    SUITO, K
    KAWAI, N
    MASUDA, Y
    MATERIALS RESEARCH BULLETIN, 1975, 10 (07) : 677 - 680
  • [23] High-pressure behaviour of Si and Ge:: A theoretical study
    Mujica, A
    Radescu, S
    Muñoz, A
    Needs, RJ
    HIGH PRESSURE RESEARCH, 2002, 22 (02) : 455 - 458
  • [24] Theoretical and computational study of high-pressure structures in barium
    Reed, SK
    Ackland, GJ
    PHYSICAL REVIEW LETTERS, 2000, 84 (24) : 5580 - 5583
  • [25] HIGH-PRESSURE CRYSTAL-STRUCTURE OF ORTHORHOMBIC INSB
    YU, SC
    SKELTON, EF
    SPAIN, IL
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (04): : 619 - 619
  • [26] HIGH-PRESSURE OXIDATION OF SILICON
    DEAL, BE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C323 - C324
  • [27] HIGH-PRESSURE SUPERCONDUCTIVITY OF SILICON
    MIGNOT, JM
    CHOUTEAU, G
    MARTINEZ, G
    PHYSICA B & C, 1985, 135 (1-3): : 235 - 238
  • [28] PHASES OF SILICON AT HIGH-PRESSURE
    HU, JZ
    SPAIN, IL
    SOLID STATE COMMUNICATIONS, 1984, 51 (05) : 263 - 266
  • [29] THEORETICAL-STUDY OF THE PHOTOVOLTAIC PROPERTIES OF POLYCRYSTALLINE SILICON
    JOSHI, DP
    SRIVASTAVA, RS
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2849 - 2858
  • [30] A THEORETICAL-STUDY OF ADSORPTION EQUILIBRIA IN SILICON CVD
    GARDENIERS, JGE
    GILING, LJ
    DEJONG, F
    VANDEREERDEN, JP
    JOURNAL OF CRYSTAL GROWTH, 1990, 104 (03) : 727 - 743