High-pressure behaviour of Si and Ge:: A theoretical study

被引：2

作者：

Mujica, A ^{[1
]}

Radescu, S

Muñoz, A

Needs, RJ

机构：

[1] Univ La Laguna, Dept Fis Fundamental 2, E-38205 Tenerife, Spain

[2] Univ Cambridge, Cavendish Lab, Condensed Matter Theory Grp, Cambridge CB3 0HE, England

来源：

HIGH PRESSURE RESEARCH | 2002年 / 22卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

Si; Ge; high-pressure phases; DFT-LDA; plane-waves-pseudopotential method;

D O I：

10.1080/08957950212809

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this work we summarize the results of first-principles theoretical studies of the sequence of pressure-driven phase-transitions followed by the group-IVa elements Si and Ge. The agreement with the available experimental data is very good.

引用

页码：455 / 458

页数：4

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