High-pressure behaviour of Si and Ge:: A theoretical study

被引：2
|
作者：
Mujica, A [1 ]
Radescu, S
Muñoz, A
Needs, RJ
机构：
[1] Univ La Laguna, Dept Fis Fundamental 2, E-38205 Tenerife, Spain
[2] Univ Cambridge, Cavendish Lab, Condensed Matter Theory Grp, Cambridge CB3 0HE, England
来源：
HIGH PRESSURE RESEARCH | 2002年 / 22卷 / 02期
基金：
英国工程与自然科学研究理事会;
关键词：
Si; Ge; high-pressure phases; DFT-LDA; plane-waves-pseudopotential method;
D O I：
10.1080/08957950212809
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this work we summarize the results of first-principles theoretical studies of the sequence of pressure-driven phase-transitions followed by the group-IVa elements Si and Ge. The agreement with the available experimental data is very good.
引用
收藏
页码：455 / 458
页数：4
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