ZNSE HOMO-EPITAXIAL GROWTH BY MOLECULAR-BEAM EPITAXY

被引：26
|
作者：
MENDA, K
TAKAYASU, I
MINATO, T
KAWASHIMA, M
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(90)90740-C
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：342 / 347
页数：6
相关论文
共 50 条
  • [21] MOLECULAR-BEAM EPITAXY AND ATOMIC-LAYER EPITAXY GROWTH MECHANISMS FOR ZNSE(100)
    FARRELL, HH
    TAMARGO, MC
    DEMIGUEL, JL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 767 - 768
  • [22] Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxy
    Morel, A
    Taliercio, T
    Lefebvre, P
    Gallart, M
    Gil, B
    Grandjean, N
    Massies, J
    Grzegory, I
    Porowski, S
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 173 - 177
  • [23] EPITAXIAL-GROWTH RATE MEASUREMENTS DURING MOLECULAR-BEAM EPITAXY
    SPRINGTHORPE, AJ
    MAJEED, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 266 - 270
  • [24] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY
    OKUYAMA, H
    NAKANO, K
    MIYAJIMA, T
    AKIMOTO, K
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 139 - 143
  • [25] SELECTIVE POLYCRYSTALLINE AND EPITAXIAL-GROWTH BY SILICON MOLECULAR-BEAM EPITAXY
    GIBBINGS, CJ
    DAVIS, JR
    HOCKLY, M
    TUPPEN, CG
    THIN SOLID FILMS, 1990, 184 (1 -2 pt 2) : 221 - 227
  • [26] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY
    OKUYAMA, H
    NAKANO, K
    MIYAJIMA, T
    AKIMOTO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B): : L1620 - L1623
  • [27] SELECTIVE EPITAXIAL-GROWTH OF INAS ON GAAS BY MOLECULAR-BEAM EPITAXY
    OKAMOTO, A
    OHATA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1174 - L1176
  • [28] GROWTH OF ZNS/ZNTE AND ZNSE/ZNTE SUPERLATTICES BY MOLECULAR-BEAM EPITAXY AND ATOMIC LAYER EPITAXY
    TAKEDA, T
    KUROSU, T
    LIDA, M
    YAO, T
    SURFACE SCIENCE, 1986, 174 (1-3) : 548 - 549
  • [29] THE GROWTH OF HGSE BY MOLECULAR-BEAM EPITAXY FOR OHMIC CONTACTS TO P-ZNSE
    EINFELDT, S
    HEINKE, H
    BEHRINGER, M
    BECKER, CR
    KURTZ, E
    HOMMEL, D
    LANDWEHR, G
    JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 471 - 476
  • [30] GROWTH OF ZNSE/MGS STRAINED-LAYER SUPERLATTICES BY MOLECULAR-BEAM EPITAXY
    TERAGUCHI, N
    MOURI, H
    TOMOMURA, Y
    TANIGUCHI, H
    RORISON, J
    DUGGAN, G
    APPLIED PHYSICS LETTERS, 1995, 67 (20) : 2945 - 2947
12345