Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxy

被引：1

作者：

Morel, A

Taliercio, T

Lefebvre, P

Gallart, M

Gil, B

Grandjean, N

Massies, J

Grzegory, I

Porowski, S

机构：

[1] Univ Montpellier 2, CNRS, Etud Semicond Grp, F-34095 Montpellier 5, France

[2] Ctr Rech Hetero Epitaxie & Applicat, CNRS, F-06560 Valbonne, France

[3] Polish Acad Sci, High Pressure Res Ctr, PL-01141 Warsaw, Poland

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 82卷 / 1-3期

关键词：

exciton-polariton modes; GaN film; molecular beam epitaxy;

D O I：

10.1016/S0921-5107(00)00778-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the observation of confined modes in the mixed photon/exciton-like branches of exciton-polaritons propagating along the growth axis of a 700 nm-thick GaN film, deposited by Molecular Beam Epitaxy on bulk GaN substrates. The energies of the confined modes are in agreement with a simple modelling of quantized wavevectors in the thin layer, including the proper four-branch dispersion relation of polaritons in the wurtzite GaN. Such an observation results from the large coherence length of the exciton-polariton in the epilayer, testifying to the very good crystalline quality of the material. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：173 / 177

页数：5

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