LARGE 2ND-ORDER OPTICAL NONLINEARITIES IN PULSED-LASER ABLATED SILICON-CARBIDE THIN-FILMS

被引：22
|
作者：
LUNDQUIST, PM [1 ]
ONG, HC [1 ]
LIN, WP [1 ]
CHANG, RPH [1 ]
KETTERSON, JB [1 ]
WONG, GK [1 ]
机构：
[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 20期
关键词：
19;
D O I：
10.1063/1.114842
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Large second-order nonlinear optical response has been observed in silicon carbide thin films deposited by pulsed laser ablation on sapphire and fused silica substrates; films on both substrates were uniform and optically transparent but exhibited distinct orientations. The d(33) values of the sapphire-substrate samples were determined to be 10 pm/V. (C) 1995 American Institute of Physics.
引用
收藏
页码：2919 / 2921
页数：3
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