LARGE 2ND-ORDER OPTICAL NONLINEARITIES IN PULSED-LASER ABLATED SILICON-CARBIDE THIN-FILMS

被引：22

作者：

LUNDQUIST, PM ^{[1
]}

ONG, HC ^{[1
]}

LIN, WP ^{[1
]}

CHANG, RPH ^{[1
]}

KETTERSON, JB ^{[1
]}

WONG, GK ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 20期

关键词：

19;

D O I：

10.1063/1.114842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Large second-order nonlinear optical response has been observed in silicon carbide thin films deposited by pulsed laser ablation on sapphire and fused silica substrates; films on both substrates were uniform and optically transparent but exhibited distinct orientations. The d(33) values of the sapphire-substrate samples were determined to be 10 pm/V. (C) 1995 American Institute of Physics.

引用

页码：2919 / 2921

页数：3

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