EMITTER SIDEWALL JUNCTION CAPACITANCE IN DOUBLE-DIFFUSED TRANSISTORS

被引：2
|
作者：
RUMIN, N
LAWRENCE, H
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1966年 / 54卷 / 11期
关键词：
D O I：
10.1109/PROC.1966.5220
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1606 / &
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