Modeling of γ-irradiation and lowered temperature effects in power vertical double-diffused metal oxide-semiconductor transistors

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Univ of Nis Beogradska, Nis, Yugoslavia [1 ]
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Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 8卷 / 4699-4702期
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MOSFET devices
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