Modeling of γ-irradiation and lowered temperature effects in power vertical double-diffused metal oxide-semiconductor transistors

被引：0
|
作者：
Univ of Nis Beogradska, Nis, Yugoslavia [1 ]
机构：
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 8卷 / 4699-4702期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
MOSFET devices
引用
收藏
相关论文
共 50 条
  • [21] A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors -: art. no. 014503
    Park, MS
    Na, I
    Wie, CR
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (01)
  • [22] A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhomogeneous floating islands
    任敏
    李泽宏
    刘小龙
    谢加雄
    邓光敏
    张波
    ChinesePhysicsB, 2011, 20 (12) : 454 - 458
  • [23] A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhomogeneous floating islands
    Ren Min
    Li Ze-Hong
    Liu Xiao-Long
    Xie Jia-Xiong
    Deng Guang-Min
    Zhang Bo
    CHINESE PHYSICS B, 2011, 20 (12)
  • [24] A L-Band Class AB Power Amplifier Based on the Lateral Double-diffused Metal Oxide Semiconductor Device
    Liang, Qicong
    Yao, Jiafei
    Guo, Yufeng
    Cai, ZhiKuang
    Gu, MingYuan
    Sun, MingShun
    2021 THE 6TH INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2021), 2021, : 232 - 235
  • [25] Breakdown Characteristics of High-Side Lateral Double-Diffused Metal Oxide Semiconductor Devices
    Sung, Kunsik
    Kim, Kwangsik
    Won, Taeyoung
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (07) : 5297 - 5302
  • [26] 4H-SiC layer with multiple trenches in lateral double-diffused metal-oxide-semiconductor transistors for high temperature and high voltage applications
    Sohrabi-Movahed, Amir
    Orouji, Ali Asghar
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2023, 41 (06):
  • [27] Design Issues for Lateral Double-Diffused Metal-Oxide-Semiconductor with Higher Breakdown Voltage
    Sung, Kunsik
    Won, Taeyoung
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 13 (05) : 3260 - 3264
  • [28] Taste sensor based on the floating gate structure of a lateral double-diffused metal-oxide semiconductor
    Jeong, Hyun-Min
    Kwon, Hyurk-Choon
    Xu, Binrui
    Jung, Daewoong
    Han, Maeum
    Kwon, Dae-Hyuk
    Kang, Shin-Won
    SENSORS AND ACTUATORS B-CHEMICAL, 2020, 308
  • [29] New folding lateral double-diffused metal-oxide-semiconductor field effect transistor with the step oxide layer
    Duan Bao-Xing
    Li Chun-Lai
    Ma Jian-Chong
    Yuan Song
    Yang Yin-Tang
    ACTA PHYSICA SINICA, 2015, 64 (06)
  • [30] RADIATION-INDUCED MOBILITY DEGRADATION IN P-CHANNEL DOUBLE-DIFFUSED METAL-OXIDE-SEMICONDUCTOR POWER TRANSISTORS AT 300-K AND 77-K
    ZUPAC, D
    GALLOWAY, KF
    SCHRIMPF, RD
    AUGIER, P
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) : 2910 - 2915
12345