PHENOMENOLOGICAL MODEL OF PHASE-GRATING FORMATION IN AMORPHOUS-SEMICONDUCTORS

被引：0
|
作者：
OKOSHI, T [1 ]
MASAMURA, T [1 ]
机构：
[1] UNIV TOKYO,FAC ENGN,TOKYO 113,JAPAN
来源：
ELECTRONICS & COMMUNICATIONS IN JAPAN | 1975年 / 58卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：96 / 100
页数：5
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