PHENOMENOLOGICAL MODEL OF PHASE-GRATING FORMATION IN AMORPHOUS-SEMICONDUCTORS

被引：0

作者：

OKOSHI, T ^{[1
]}

MASAMURA, T ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,TOKYO 113,JAPAN

来源：

ELECTRONICS & COMMUNICATIONS IN JAPAN | 1975年 / 58卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：96 / 100

页数：5

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