A MODEL OF FIELD (TUNNEL) GENERATION OF POSITIVE CHARGE IN THERMAL SILICON DIOXIDE OF SI-SIO2 STRUCTURES

被引：1
|
作者：
MIKHAILOVSKII, IP
EPOV, AE
机构：
[1] Acad of Sciences of the USSR, Inst, of Semiconductor Physics,, Novosibirsk, USSR, Acad of Sciences of the USSR, Inst of Semiconductor Physics, Novosibirsk, USSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 92卷 / 02期
关键词：
SEMICONDUCTING SILICON;
D O I：
10.1002/pssa.2210920236
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A model is developed of field (tunnel) generation of positive charge in thermal silicon dioxide of Si-SiO//2 structures under high electric fields. The main characteristics of accumulated charge, i. e. kinetic DELTA U//F//B(t), depth and current-time dependences, etc are numerically simulated. It is shown that the model satisfactorily explains some experimentally observed facts and the mechanism of tunnel ionization must be taken into account, when charge accumulation in dielectrics under high field condition is investigated.
引用
收藏
页码：615 / 622
页数：8
相关论文
共 50 条
  • [1] Specific features of the field generation of minority charge carriers in Si-SiO2 structures
    Baraban, A. P.
    Konorov, P. P.
    Dmitriev, V. A.
    Prokof'ev, V. A.
    SEMICONDUCTORS, 2013, 47 (04) : 511 - 513
  • [2] Specific features of the field generation of minority charge carriers in Si-SiO2 structures
    A. P. Baraban
    P. P. Konorov
    V. A. Dmitriev
    V. A. Prokof’ev
    Semiconductors, 2013, 47 : 511 - 513
  • [3] FIELD-IONIZATION OF DEEP CENTERS IN THERMIC SILICON DIOXIDE OF SI-SIO2 STRUCTURES
    MIKHAILOVSKII, IP
    EPOV, AE
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1984, 10 (07): : 416 - 419
  • [4] MODEL FOR THE GENERATION OF POSITIVE CHARGE AT THE SI-SIO2 INTERFACE BASED ON HOT-HOLE INJECTION FROM THE ANODE
    FISCHETTI, MV
    PHYSICAL REVIEW B, 1985, 31 (04) : 2099 - 2113
  • [5] Charge transport in Si-SiO2 and Si-TiO2 nanocomposite structures
    Yu. S. Milovanov
    G. V. Kuznetsov
    V. A. Skryshevsky
    S. M. Stupan
    Semiconductors, 2014, 48 : 1335 - 1341
  • [6] Charge Transport in Si-SiO2 and Si-TiO2 Nanocomposite Structures
    Milovanov, Yu S.
    Kuznetsov, G. V.
    Skryshevsky, V. A.
    Stupan, S. M.
    SEMICONDUCTORS, 2014, 48 (10) : 1335 - 1341
  • [7] Charge losses in segmented silicon sensors at the Si-SiO2 interface
    Poehlsen, Thomas
    Fretwurst, Eckhart
    Klanner, Robert
    Schuwalow, Sergej
    Schwandt, Joern
    Zhang, Jiaguo
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2013, 700 : 22 - 39
  • [8] Electric field affects the charge state in ion-implanted Si-SiO2 structures
    Baraban, AP
    Miloglyadova, LV
    Ter-Nersesyants, VI
    TECHNICAL PHYSICS LETTERS, 2001, 27 (02) : 129 - 131
  • [9] Electric field affects the charge state in ion-implanted Si-SiO2 structures
    A. P. Baraban
    L. V. Miloglyadova
    V. I. Ter-Nersesyants
    Technical Physics Letters, 2001, 27 : 129 - 131
  • [10] THE CHARGE INJECTION EFFECT ON THE ACOUSTOELECTRIC PROPERTIES OF SI-SIO2 STRUCTURES
    DURCEK, J
    FETTIG, R
    ROSENZWEIG, J
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 101 (01): : K33 - K34
12345