GLOW-DISCHARGE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

被引:20
|
作者
HIRAI, Y
OSADA, Y
KOMATSU, T
OMATA, S
AIHARA, K
NAKAGIRI, T
机构
关键词
D O I
10.1063/1.94078
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:701 / 703
页数:3
相关论文
共 50 条
  • [31] 1/fγ noise in polycrystalline silicon thin-film transistors
    LPCS, ENSERG, 23 rue des Martyrs, 38016 Grenoble Cedex 1, France
    不详
    不详
    J Appl Phys, 7 (3934-3936):
  • [32] Simulation of the backward current in polycrystalline silicon thin-film transistors
    Baudet, M
    Lhermite, H
    Mohammed-Brahim, T
    POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS, 2001, 80-81 : 379 - 384
  • [33] Reliability of Polycrystalline Silicon Thin-Film Transistors on the glass substrate
    Choi, Sung-Hwan
    Han, Min-Koo
    THIN FILM TRANSISTORS 10 (TFT 10), 2010, 33 (05): : 41 - 49
  • [34] Anomalous substrate current in polycrystalline silicon thin-film transistors
    Zan, HW
    Chen, SC
    Wang, SH
    Chang, CY
    ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, : 469 - 472
  • [35] Bridged-Grain Polycrystalline Silicon Thin-Film Transistors
    Zhao, Shuyun
    Meng, Zhiguo
    Zhou, Wei
    Ho, Jacob
    Wong, Man
    Kwok, Hoi-Sing
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (06) : 1965 - 1970
  • [36] PROPERTIES OF THIN GLOW-DISCHARGE POLYMER FILM
    KAMPFRATH, G
    DUSCHL, D
    HAMANN, C
    ACTA POLYMERICA, 1987, 38 (06) : 389 - 393
  • [37] MECHANISM OF POLYSILAZANE THIN-FILM FORMATION DURING GLOW-DISCHARGE POLYMERIZATION OF HEXAMETHYLCYCLOTRISILAZANE
    WROBEL, AM
    KRYSZEWSKI, M
    GAZICKI, M
    POLYMER, 1976, 17 (08) : 673 - 677
  • [38] INFLUENCE OF OXYGEN ON ELECTRICAL PROPERTIES OF STYRENE THIN-FILM POLYMERIZED IN A GLOW-DISCHARGE
    MORITA, S
    SAWA, G
    LEDA, M
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) : 2435 - 2436
  • [39] Integrated amorphous and polycrystalline silicon thin-film transistors in a single silicon layer
    Pangal, K
    Sturm, JC
    Wagner, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (04) : 707 - 714
  • [40] Dependence of the leakage current on the film quality in polycrystalline silicon thin-film transistors
    Dimitriadis, CA
    Farmakis, FV
    Brini, J
    Kamarinos, G
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) : 2648 - 2651