OPTOELECTRONIC PROPERTIES OF CD1-XZNXTE FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES

被引：164
|
作者：
OLEGO, DJ [1 ]
FAURIE, JP [1 ]
SIVANANTHAN, S [1 ]
RACCAH, PM [1 ]
机构：
[1] UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 11期
关键词：
D O I：
10.1063/1.96316
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1172 / 1174
页数：3
相关论文
共 50 条
  • [31] LAYERS OF INXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY ON SUBSTRATES OF (100) GAAS
    DVORYANKINA, GG
    DVORYANKIN, VF
    PETROV, AG
    POROTIKOV, AP
    KUDRYASHOV, AA
    ORMONT, AB
    VARAKSIN, GA
    DLUGACH, LB
    INORGANIC MATERIALS, 1988, 24 (07) : 920 - 924
  • [32] Material properties and performance of metamorphic optoelectronic integrated circuits grown by molecular beam epitaxy on GaAs substrates
    Hoke, WE
    Leoni, RE
    Whelan, CS
    Kennedy, TD
    Torabi, A
    Marsh, PF
    Zhang, Y
    Xu, C
    Hsieh, KC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1554 - 1557
  • [33] GROWTH OF HG1-XZNXTE BY MOLECULAR-BEAM EPITAXY ON A GAAS (100) SUBSTRATE
    SIVANANTHAN, S
    CHU, X
    BOUKERCHE, M
    FAURIE, JP
    APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1291 - 1293
  • [34] PROPERTIES OF FE SINGLE-CRYSTAL FILMS GROWN ON (100)GAAS BY MOLECULAR-BEAM EPITAXY
    KREBS, JJ
    JONKER, BT
    PRINZ, GA
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2596 - 2599
  • [35] Effect of Uncontrollable Impurities on the Electric Properties of GaAs Films Grown by Molecular-Beam Epitaxy.
    Dvoryankina, G.G.
    Dvoryankin, V.F.
    Varaksin, G.A.
    Petrov, A.G.
    Kudryashov, A.A.
    Shemet, V.V.
    Yassen, M.L.
    Neorganiceskie materialy, 1986, 22 (03): : 371 - 375
  • [36] EFFECT OF UNCONTROLLED IMPURITIES ON ELECTRICAL-PROPERTIES OF GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    DVORYANKINA, GG
    DVORYANKIN, VF
    VARAKSIN, GA
    PETROV, AG
    KUDRYASHOV, AA
    SHEMET, VV
    YASSEN, ML
    INORGANIC MATERIALS, 1986, 22 (03) : 322 - 326
  • [37] HETEROSTRUCTURES OF GAAS1-XSBX ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    ZHAO, JH
    JEONG, JC
    SCHLESINGER, TE
    MILNES, AG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C379 - C379
  • [38] ELECTRICAL AND OPTICAL-PROPERTIES OF SI DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY ON (311) SUBSTRATES
    TAKAMORI, T
    FUKUNAGA, T
    KOBAYASHI, J
    ISHIDA, K
    NAKASHIMA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (07): : 1097 - 1101
  • [39] Effect of annealing on electrical properties of InAsSb films grown on GaAs substrates by molecular beam epitaxy
    Liu, Xiaoming
    Li, Hongtao
    Guo, Fengyun
    Li, Meicheng
    Zhao, Liancheng
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (09): : 1635 - 1639
  • [40] IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES
    XIAO, GM
    YIN, SD
    ZHANG, JP
    DING, AJ
    DONG, AH
    ZHU, PR
    ZHOU, JM
    CHINESE PHYSICS LETTERS, 1991, 8 (03) : 149 - 152
12345