ELECTRICAL AND OPTICAL-PROPERTIES OF SI DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY ON (311) SUBSTRATES

被引：31
|
作者：
TAKAMORI, T [1 ]
FUKUNAGA, T [1 ]
KOBAYASHI, J [1 ]
ISHIDA, K [1 ]
NAKASHIMA, H [1 ]
机构：
[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 07期
关键词：
D O I：
10.1143/JJAP.26.1097
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1097 / 1101
页数：5
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