ELECTRICAL AND OPTICAL-PROPERTIES OF SI DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY ON (311) SUBSTRATES

被引：31
|
作者：
TAKAMORI, T [1 ]
FUKUNAGA, T [1 ]
KOBAYASHI, J [1 ]
ISHIDA, K [1 ]
NAKASHIMA, H [1 ]
机构：
[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 07期
关键词：
D O I：
10.1143/JJAP.26.1097
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1097 / 1101
页数：5
相关论文
共 50 条
  • [41] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    FISCHER, R
    CHAND, N
    KOPP, W
    MORKOC, H
    ERICKSON, LP
    YOUNGMAN, R
    APPLIED PHYSICS LETTERS, 1985, 47 (04) : 397 - 399
  • [42] GROWTH AND CHARACTERIZATION OF GAAS/GE EPILAYERS GROWN ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    SHELDON, P
    YACOBI, BG
    JONES, KM
    DUNLAVY, DJ
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4186 - 4193
  • [43] ANTIPHASE BOUNDARY OF GAAS FILMS GROWN ON SI(001) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    KAWANAMI, H
    HATAYAMA, A
    HAYASHI, Y
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A27 - A27
  • [44] ANTIPHASE BOUNDARY OF GAAS FILMS GROWN ON SI(001) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    KAWANAMI, H
    HATAYAMA, A
    HAYASHI, Y
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (05) : 341 - 349
  • [45] Characterization of GaAs films grown on vicinal Si(110) substrates by molecular-beam epitaxy
    Yodo, Tokuo
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (9 A): : 4631 - 4640
  • [46] Si-doped and undoped Ga1-xInxSb grown by molecular-beam epitaxy on GaAs substrates
    Roslund, JH
    Swenson, G
    Andersson, TG
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (11) : 6556 - 6558
  • [47] CHARACTERIZATION OF GAAS FILMS GROWN ON VICINAL SI(110) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    YODO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9A): : 4631 - 4640
  • [48] PHOTOLUMINESCENCE IN CDTE GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    LEOPOLD, DJ
    BALLINGALL, JM
    WROGE, ML
    APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1473 - 1474
  • [49] Molecular-beam epitaxy-grown Si whisker structures: morphological, optical and electrical properties
    Naumova, O. V.
    Nastaushev, Yu V.
    Svitasheva, S. N.
    Sokolov, L. V.
    Zakharov, N. D.
    Gavrilova, T. A.
    Dultsev, F. N.
    Aseev, A. L.
    NANOTECHNOLOGY, 2008, 19 (22)
  • [50] Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy
    Polyakov, AY
    Govorkov, AV
    Smirnov, NB
    Pashkova, NY
    Thaler, GT
    Overberg, ME
    Frazier, R
    Abernathy, CR
    Pearton, SJ
    Kim, J
    Ren, F
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) : 4989 - 4993
12345