THE ROLE OF EPITAXY AND SUBSTRATE ON JUNCTION FORMATION IN ION-IMPLANTED HGCDTE

被引：10
|
作者：
BUBULAC, LO
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1985年 / 72卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(85)90194-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：478 / 484
页数：7
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