THE ROLE OF EPITAXY AND SUBSTRATE ON JUNCTION FORMATION IN ION-IMPLANTED HGCDTE

被引：10
|
作者：
BUBULAC, LO
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1985年 / 72卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(85)90194-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：478 / 484
页数：7
相关论文
共 50 条
  • [21] Junction stability in ion-implanted mercury cadmium telluride
    Chandra, D.
    Schaake, H. F.
    Kinch, M. A.
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (09) : 1329 - 1333
  • [22] Ion-implanted GaN junction field effect transistor
    Zolper, JC
    Shul, RJ
    Baca, AG
    Wilson, RG
    Pearton, SJ
    Stall, RA
    APPLIED PHYSICS LETTERS, 1996, 68 (16) : 2273 - 2275
  • [23] Junction Stability in Ion-Implanted Mercury Cadmium Telluride
    D. Chandra
    H.F. Schaake
    M.A. Kinch
    Journal of Electronic Materials, 2008, 37 : 1329 - 1333
  • [24] Secondary ion mass spectrometry characterization of ion-implanted arsenic distribution in bulk HgCdTe
    Zhao, J
    Lu, HQ
    Li, XY
    Fang, JX
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2000, 19 (04) : 281 - 284
  • [25] Secondary ion mass spectrometry characterization of ion-implanted arsenic distribution in bulk HgCdTe
    Zhao, Jun
    Lu, Huiqing
    Li, Xiangyang
    Fang, Jiaxiong
    Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 2000, 19 (04): : 281 - 284
  • [26] GROWTH OF SILICON EPITAXY OVER ION-IMPLANTED BURIED LAYERS
    KANNAN, VC
    ROPER, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C120 - C120
  • [27] SILICON CRYSTALLITE FORMATION IN ION-IMPLANTED QUARTZ
    RAMABADRAN, UB
    JACKSON, HE
    FARLOW, GC
    APPLIED PHYSICS LETTERS, 1989, 55 (12) : 1199 - 1201
  • [28] METASTABLE PHASE FORMATION IN ION-IMPLANTED METALS
    FOLLSTAEDT, DM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 11 - 19
  • [29] Formation of titanium silicide on ion-implanted silicon
    Gilboa, YE
    Eizenberg, M
    RAPID THERMAL AND INTEGRATED PROCESSING VI, 1997, 470 : 253 - 258
  • [30] AMORPHOUS PHASE FORMATION IN ION-IMPLANTED COBALT
    LI, WZ
    ALTAMIMI, Z
    GRANT, WA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 566 - 570
12345