SELECTIVE REMOVAL OF METAL ATOMS IN HYDROGEN REACTIVE ION ETCHING

被引：5
|
作者：
HIRAOKA, H
机构：
[1] IBM, San Jose, CA, USA, IBM, San Jose, CA, USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期
关键词：
DRY STRIPPING - HYDROGEN REACTIVE ION ETCHING - ORGANOMETALLIC RESIST FILMS - POSITIVE TONE POLYMER IMAGES;
D O I：
10.1116/1.583328
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：345 / 348
页数：4
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