PERSISTENT CHANNEL DEPLETION CAUSED BY HOT-ELECTRON TRAPPING EFFECT IN SELECTIVELY DOPED N-ALGAAS/GAAS STRUCTURES

被引：9
|
作者：
KINOSHITA, H
NISHI, S
AKIYAMA, M
ISHIDA, T
KAMINISHI, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 03期
关键词：
D O I：
10.1143/JJAP.24.377
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：377 / 378
页数：2
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