PERSISTENT CHANNEL DEPLETION CAUSED BY HOT-ELECTRON TRAPPING EFFECT IN SELECTIVELY DOPED N-ALGAAS/GAAS STRUCTURES

被引：9

|

作者：

KINOSHITA, H

NISHI, S

AKIYAMA, M

ISHIDA, T

KAMINISHI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 03期

关键词：

D O I：

10.1143/JJAP.24.377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：377 / 378

页数：2

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