ELECTRICAL-PROPERTIES OF THIN GEXSE1-X AMORPHOUS FILMS

Structural investigation of Ge(x) Se1-x films deposited in vacuum of 10(-5) torr onto glass substrates held at room temperature indicate that the films are in an amorphous state for 0.05-less-than-or-equal-to-X-less-than-or-equal-to-0.3. The dark electrical resistivity of Ge(x) Se1-x a-films deposited onto glass substrates was measured at room temperature and at elevated temperature. The dark electrical resistivity for given composition and thickness changed exponentially with temperature. The thermal activation energy DELTA-E of the free charge carriers was determined for each composition. It was found that DELTA-E decreased with increasing Ge content in the range 0.05-less-than-or-equal-to-X-less-than-or-equal-to-0.3.