Structure of amorphous GexSe1-x and GexSeyZnz thin films:: an EXAFS study

被引:16
|
作者
Choi, J [1 ]
Gurman, SJ [1 ]
Davis, EA [1 ]
机构
[1] Univ Leicester, Dept Phys & Astron, Leicester LE1 7RH, Leics, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1016/S0022-3093(01)00937-1
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Extended X-ray absorption fine structure (EXAFS) measurements have been made on thin films of a-GexS1-x with 0.2 < x < 1. The results show that the Ge-Ge, Ge-Se and Se-Se bond lengths have values 2.45, 2.37 and 2.32 (all +/-0.03) A, respectively and are independent of film composition. The partial atomic coordination numbers of Ge and Se suggest that the films have a predominantly chemically ordered 4-2 coordinated covalent bond network structure throughout the whole composition range, as found by others for Ge-Se bulk glasses with x < 0.4. EXAFS data for a-GexSey Zn-z films show that the lengths of Ge-Zn and Se-Zn bonds are 2.57 +/- 0.05 and 2.44 +/- 0.03 Angstrom, independent of the composition. Results on the atomic coordinations reveal that Zn is fourfold coordinated and preferentially bonds to Se atoms. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:156 / 172
页数:17
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