PHOTOCAPACITANCE INVESTIGATION OF THE IONIZED LEVELS IN N-GAAS CRYSTALS AND ITS ASSOCIATION WITH THE PHOTOQUENCHING PHENOMENON

被引：7

作者：

NISHIZAWA, J

OYAMA, Y

DEZAKI, K

机构：

[1] Semiconductor Research Institute, Semiconductor Research Foundation

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 09期

关键词：

D O I：

10.1063/1.355937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results are reported of a photocapacitance (PHCAP) investigation to evaluate the ionized deep levels in n-GaAs crystals. The PHCAP measurements reveal two sorts of ionized deep levels at 0.50 and 0.74 eV above the valence band at 45 K only during the photoquenching phenomenon. The changes of ion densities are shown as a function of the course of the photoquenching phenomenon. From the change of ion density of each level, it is shown that the generation of the 0.50 eV+E(v) level by photoexcitation plays a vital role in the occurrence of the photoquenching phenomenon.

引用

页码：4482 / 4485

页数：4

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