PHOTOCAPACITANCE INVESTIGATION OF THE IONIZED LEVELS IN N-GAAS CRYSTALS AND ITS ASSOCIATION WITH THE PHOTOQUENCHING PHENOMENON

被引：7
|
作者：
NISHIZAWA, J
OYAMA, Y
DEZAKI, K
机构：
[1] Semiconductor Research Institute, Semiconductor Research Foundation
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 09期
关键词：
D O I：
10.1063/1.355937
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Results are reported of a photocapacitance (PHCAP) investigation to evaluate the ionized deep levels in n-GaAs crystals. The PHCAP measurements reveal two sorts of ionized deep levels at 0.50 and 0.74 eV above the valence band at 45 K only during the photoquenching phenomenon. The changes of ion densities are shown as a function of the course of the photoquenching phenomenon. From the change of ion density of each level, it is shown that the generation of the 0.50 eV+E(v) level by photoexcitation plays a vital role in the occurrence of the photoquenching phenomenon.
引用
收藏
页码：4482 / 4485
页数：4
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