DIFFUSION CROSSTALK BETWEEN PHOTOSENSING ELEMENTS IN SILICON STRUCTURES

被引:0
|
作者
BLYNSKII, VI
KULIKOV, AY
OSINSKII, VI
RAKHLEI, SY
机构
来源
DOKLADY AKADEMII NAUK BELARUSI | 1989年 / 33卷 / 02期
关键词
D O I
暂无
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
引用
收藏
页码:117 / 120
页数:4
相关论文
共 50 条
  • [1] PHOTOELECTRIC CROSSTALK BETWEEN SILICON PHOTOELEMENTS
    BLYNSKII, VI
    KULIKOV, AY
    RAKHLEY, SY
    OSINSKII, VI
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 121 (01): : 227 - 233
  • [2] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON
    FULLER, CS
    DITZENBERGER, JA
    JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553
  • [3] Crosstalk Analysis of Interconnection Structures Fabricated on Silicon Interposer
    Yi, He
    Cao, Liqiang
    Zhou, Jing
    Wang, Qibing
    Yu, Daquan
    Wan, Lixi
    2013 14TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2013, : 547 - 550
  • [4] DIFFUSION PIPES IN SILICON NPN STRUCTURES
    BARSON, F
    HESS, MS
    ROY, MM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : C70 - &
  • [5] DIFFUSION PIPES IN SILICON NPN STRUCTURES
    BARSON, F
    HESS, MS
    ROY, MM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 304 - &
  • [6] INFLUENCE OF DISLOCATIONS ON DIFFUSION OF IV GROUP ELEMENTS IN SILICON
    PANTELEE.VA
    BARYSHEV, RS
    FIZIKA TVERDOGO TELA, 1974, 16 (09): : 2670 - 2673
  • [7] LOCALIZED ENHANCED DIFFUSION IN NPN SILICON STRUCTURES
    GERETH, R
    VANLOON, PGG
    WILLIAMS, V
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) : 323 - +
  • [8] DIFFUSION MECHANISM FOR III AND V GROUP ELEMENTS, IN SILICON
    PANTELEEV, VA
    RUDOI, NE
    OKULICH, VI
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1973, (04): : 157 - 158
  • [9] Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures
    Kononchuk, O
    Korablev, KG
    Yarykin, N
    Rozgonyi, GA
    APPLIED PHYSICS LETTERS, 1998, 73 (09) : 1206 - 1208