GROWTH RATES OF EPITAXIAL GALLIUM ARSENIDE

被引：8

|

作者：

GOLDSMITH, N

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1963年 / 110卷 / 06期

关键词：

D O I：

10.1149/1.2425822

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：588 / 589

页数：2

相关论文

共 50 条

[31] EPITAXIAL GALLIUM ARSENIDE AS HALL ELEMENTS
THANAILAKIS, AO
COHEN, E
SOLID-STATE ELECTRONICS, 1969, 12 (12) : 997 - +
[32] Diffusion of chromium into epitaxial gallium arsenide
M. D. Vilisova
E. P. Drugova
I. V. Ponomarev
V. A. Chubirko
Semiconductors, 2008, 42 : 238 - 241
[33] PREPARATION AND PROPERTIES OF EPITAXIAL GALLIUM ARSENIDE
MARUYAMA, M
KIKUCHI, S
MIZUNO, O
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (03) : 413 - &
[34] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH
KNIGHT, JR
EFFER, D
EVANS, PR
SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &
[35] Diffusion of chromium into epitaxial gallium arsenide
Vilisova, M. D.
Drugova, E. P.
Ponomarev, I. V.
Chubirko, V. A.
SEMICONDUCTORS, 2008, 42 (02) : 238 - 241
[36] MORPHOLOGICAL ASPECTS OF EPITAXIAL GROWTH OF GALLIUM ARSENIDE CRYSTALS IN POLAR DIRECTION
SHEFTAL, NN
MAGOMEDO.KA
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, S : 533 - &
[37] ROUGHENING OF MONOATOMIC GROWTH STEPS IN EPITAXIAL GALLIUM-ARSENIDE FILMS
MORLOCK, U
QUEISSER, HJ
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1991, 64 (01): : 165 - 171
[38] EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE LAYERS OF GERMANIUM SUBSTRATES
KAMADJIE.PR
SOTIROV, SS
DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1972, 25 (11): : 1499 - 1502
[39] INFRARED CHARACTERIZATION OF AN EPITAXIAL FILM OF GALLIUM-ARSENIDE ON A GALLIUM-ARSENIDE SUBSTRATE
PALIK, ED
HOLM, RT
GIBSON, JW
THIN SOLID FILMS, 1977, 47 (02) : 167 - 175
[40] INITIAL-STAGES OF EPITAXIAL-GROWTH - GALLIUM-ARSENIDE ON SILICON
ZINKEALLMANG, M
FELDMAN, LC
NAKAHARA, S
APPLIED PHYSICS LETTERS, 1988, 52 (02) : 144 - 146

← 1 2 3 4 5 →