ROUGHENING OF MONOATOMIC GROWTH STEPS IN EPITAXIAL GALLIUM-ARSENIDE FILMS

被引：3
|
作者：
MORLOCK, U
QUEISSER, HJ
机构：
[1] Max-Planck-Institut für Festkörperforschung, 80, Heisenbergstrasse 1
来源：
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1991年 / 64卷 / 01期
关键词：
LIQUID-PHASE EPITAXY; CRYSTAL-SURFACES; HCP HE-4; TRANSITION; GAAS;
D O I：
10.1080/01418619108206133
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Monoatomic growth steps on vicinal (100) faces of gallium arsenide, grown epitaxially from gallium solution close to thermal equilibrium, are normally straight, equidistant and usually nucleated at dislocation emergence points. Beyond a critical temperature (T(c) = 765-degrees-C) for epitaxy termination, the steps display a sudden onset of roughening and bunching which suggest interpretation in terms of a roughening phase transition. No such roughening is found for alloys of GaAs with AlAs up to 800-degrees-C.
引用
收藏
页码：165 / 171
页数：7
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