ROUGHENING OF MONOATOMIC GROWTH STEPS IN EPITAXIAL GALLIUM-ARSENIDE FILMS

被引：3
|
作者：
MORLOCK, U
QUEISSER, HJ
机构：
[1] Max-Planck-Institut für Festkörperforschung, 80, Heisenbergstrasse 1
来源：
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1991年 / 64卷 / 01期
关键词：
LIQUID-PHASE EPITAXY; CRYSTAL-SURFACES; HCP HE-4; TRANSITION; GAAS;
D O I：
10.1080/01418619108206133
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Monoatomic growth steps on vicinal (100) faces of gallium arsenide, grown epitaxially from gallium solution close to thermal equilibrium, are normally straight, equidistant and usually nucleated at dislocation emergence points. Beyond a critical temperature (T(c) = 765-degrees-C) for epitaxy termination, the steps display a sudden onset of roughening and bunching which suggest interpretation in terms of a roughening phase transition. No such roughening is found for alloys of GaAs with AlAs up to 800-degrees-C.
引用
收藏
页码：165 / 171
页数：7
相关论文
共 50 条
  • [31] PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE FILMS DOPED WITH RARE-EARTH ELEMENTS
    VORONINA, TI
    LAGUNOVA, TS
    SAMORUKOV, BE
    STRUGOV, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (01): : 91 - 92
  • [32] ELECTRICAL-PROPERTIES OF EPITAXIAL SILICON-DOPED GALLIUM-ARSENIDE FILMS
    MILVIDSKII, MG
    SOLOVEVA, EV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (03): : 325 - 328
  • [33] THIN-FILMS ON GALLIUM-ARSENIDE
    HARTNAGEL, HL
    ELECTRONICS AND POWER, 1976, 22 (11-1): : 765 - 767
  • [34] GALLIUM-ARSENIDE FILMS ON FOREIGN SUBSTRATES
    CHU, SS
    CHU, TL
    MONROE, S
    WANG, CP
    YANG, HT
    YOO, HI
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C105 - C105
  • [35] MISFIT DISLOCATIONS AND THE MORPHOLOGY OF GALLIUM ALUMINUM ARSENIDE EPITAXIAL LAYERS GROWN ON GALLIUM-ARSENIDE
    BOOYENS, H
    SMALL, MB
    POTEMSKI, RM
    BASSON, JH
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4328 - 4329
  • [36] EPITAXIAL GROWTH OF GALLIUM ARSENIDE
    PIZZARELLO, FA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (03) : C70 - C70
  • [37] GROWTH MECHANISMS OF EPITAXIAL LAYERS OF GALLIUM-ARSENIDE IN THE HYDRIDE METHOD WITH USE OF TRIMETHYLGALLIUM
    IVANYUTIN, LA
    ARENDARENKO, AA
    SOKOLOV, EB
    SLEPNEV, YV
    SHCHETININA, GN
    STOLYAROVA, MA
    INORGANIC MATERIALS, 1980, 16 (01) : 11 - 14
  • [38] LIQUID-PHASE EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE ON AN ETCHED SUBSTRATE
    NORDQUIST, PER
    LESSOFF, H
    SWIGGARD, EM
    MATERIALS RESEARCH BULLETIN, 1976, 11 (08) : 939 - 945
  • [39] EPITAXIAL-GROWTH KINETICS OF GALLIUM-ARSENIDE FROM LIQUID-PHASE
    ILKOV, LH
    DJOGLEV, DH
    DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1976, 29 (04): : 511 - 514
  • [40] LASER ENHANCED EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE FROM ELEMENTAL ARSENIC
    CHU, TL
    CHU, SS
    GREEN, RF
    JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (06) : 503 - 507
12345