RAMAN-SCATTERING IN GE-GE1-XSIX SUPERLATTICE

被引：7

作者：

CARLES, R

MLAYAH, A

LANDA, G

KUSNETSOV, OA

ORLOV, LK

VDOVIN, VI

MILVIDSKII, MG

ARONZON, BA

机构：

[1] STATE UNIV NIZHNIY NOVGOROD,PHYSICOTECH RES INST,NIZHNII NOVGOROD,RUSSIA

[2] USSR ACAD SCI,INST APPL PHYS,NIZHNII NOVGOROD,RUSSIA

[3] MOSCOW STATE UNIV RARE MET,MOSCOW,RUSSIA

[4] IV KURCHATOV ATOM ENERGY INST,MOSCOW,RUSSIA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1993年 / 13卷 / 01期

关键词：

D O I：

10.1006/spmi.1993.1022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Raman studies of Ge based Ge1-xSix superlattices are presented. Using Raman spectroscopy as a local probe, only the first Ge-Ge1-xSix bilayer underneath the surface is explored. It is shown that the top Ge layer experiences a biaxial elastic stress which we evaluate. The silicon content of the Ge1-xSix layer is deduced from the peak frequency of both Ge-Ge and Ge-Si bond vibrations. The Ge-Ge1-xSix interfacial perfection is also investigated. The Raman data reveal a smearing of this heteroboundary. © 1993 Academic Press. All rights reserved.

引用

页码：109 / 114

页数：6

共 50 条

[41] Raman scattering from acoustic modes in Si/Ge superlattice waveguides
Claps, Ricardo
Dimitropoulos, Dimitrios
Jalali, Bahram
Jusserand, Bernard
SUPERLATTICES AND MICROSTRUCTURES, 2006, 39 (06) : 501 - 516
[42] Raman scattering from a self-organized Ge dot superlattice
Device Research Laboratory, Department of Electrical Engineering, Univ. of California at Los Angeles, Los Angeles, CA 90095-1594, United States
不详
Appl Phys Lett, 13 (1863-1865):
[43] Raman scattering from a self-organized Ge dot superlattice
Liu, JL
Tang, YS
Wang, KL
Radetic, T
Gronsky, R
APPLIED PHYSICS LETTERS, 1999, 74 (13) : 1863 - 1865
[44] SUPERLATTICE CHARACTERIZATION USING RAMAN-SCATTERING
SCHWARTZ, GP
GUALTIERI, GJ
SUNDER, WA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C378 - C378
[45] RESONANT RAMAN-SCATTERING IN A SEMICONDUCTOR SUPERLATTICE
MANUEL, P
SAIHALASZ, GA
CHANG, LL
CHANG, CA
ESAKI, L
PHYSICAL REVIEW LETTERS, 1976, 37 (25) : 1701 - 1704
[46] MODEL STRUCTURE CALCULATION OF RAMAN-SCATTERING IN AMORPHOUS-GE AND SI
VONHEIME.L
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 390 - 391
[47] STRUCTURE AND RAMAN-SCATTERING OF AMORPHOUS GE0.5SI0.5
SHEVCHIK, NJ
LANNIN, JS
TEJEDA, J
PHYSICAL REVIEW B, 1973, 7 (08): : 3987 - 3991
[48] INPLANE RAMAN-SCATTERING OF (001)-SI/GE SUPERLATTICES - THEORY AND EXPERIMENT
SCHORER, R
ABSTREITER, G
DE GIRONCOLI, S
MOLINARI, E
KIBBEL, H
PRESTING, H
PHYSICAL REVIEW B, 1994, 49 (08): : 5406 - 5414
[49] RAMAN-SCATTERING AND INELASTIC TUNNELING IN A CONCENTRATED GE-SI ALLOY
LANNIN, JS
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 248 - 248
[50] The quantum Hall effect in a wide p-Ge1−xSix/Ge/p-Ge1−xSix potential well
Yu. G. Arapov
V. N. Neverov
G. I. Kharus
N. G. Shelushinina
M. V. Yakunin
O. A. Kuznetsov
Semiconductors, 1998, 32 : 649 - 656

← 1 2 3 4 5 →