RAMAN-SCATTERING IN GE-GE1-XSIX SUPERLATTICE

被引：7

作者：

CARLES, R

MLAYAH, A

LANDA, G

KUSNETSOV, OA

ORLOV, LK

VDOVIN, VI

MILVIDSKII, MG

ARONZON, BA

机构：

[1] STATE UNIV NIZHNIY NOVGOROD,PHYSICOTECH RES INST,NIZHNII NOVGOROD,RUSSIA

[2] USSR ACAD SCI,INST APPL PHYS,NIZHNII NOVGOROD,RUSSIA

[3] MOSCOW STATE UNIV RARE MET,MOSCOW,RUSSIA

[4] IV KURCHATOV ATOM ENERGY INST,MOSCOW,RUSSIA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1993年 / 13卷 / 01期

关键词：

D O I：

10.1006/spmi.1993.1022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Raman studies of Ge based Ge1-xSix superlattices are presented. Using Raman spectroscopy as a local probe, only the first Ge-Ge1-xSix bilayer underneath the surface is explored. It is shown that the top Ge layer experiences a biaxial elastic stress which we evaluate. The silicon content of the Ge1-xSix layer is deduced from the peak frequency of both Ge-Ge and Ge-Si bond vibrations. The Ge-Ge1-xSix interfacial perfection is also investigated. The Raman data reveal a smearing of this heteroboundary. © 1993 Academic Press. All rights reserved.

引用

页码：109 / 114

页数：6

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