RAMAN-SCATTERING IN GE-GE1-XSIX SUPERLATTICE

被引：7
|
作者：
CARLES, R
MLAYAH, A
LANDA, G
KUSNETSOV, OA
ORLOV, LK
VDOVIN, VI
MILVIDSKII, MG
ARONZON, BA
机构：
[1] STATE UNIV NIZHNIY NOVGOROD,PHYSICOTECH RES INST,NIZHNII NOVGOROD,RUSSIA
[2] USSR ACAD SCI,INST APPL PHYS,NIZHNII NOVGOROD,RUSSIA
[3] MOSCOW STATE UNIV RARE MET,MOSCOW,RUSSIA
[4] IV KURCHATOV ATOM ENERGY INST,MOSCOW,RUSSIA
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1993年 / 13卷 / 01期
关键词：
D O I：
10.1006/spmi.1993.1022
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Raman studies of Ge based Ge1-xSix superlattices are presented. Using Raman spectroscopy as a local probe, only the first Ge-Ge1-xSix bilayer underneath the surface is explored. It is shown that the top Ge layer experiences a biaxial elastic stress which we evaluate. The silicon content of the Ge1-xSix layer is deduced from the peak frequency of both Ge-Ge and Ge-Si bond vibrations. The Ge-Ge1-xSix interfacial perfection is also investigated. The Raman data reveal a smearing of this heteroboundary. © 1993 Academic Press. All rights reserved.
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收藏
页码：109 / 114
页数：6
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