POSSIBILITY OF INTRINSIC SI GAP STATES LOCALIZED AT THE SI-SIO2 INTERFACE

被引：9
|
作者：
MARTINEZ, E
YNDURAIN, F
机构：
来源：
PHYSICAL REVIEW B | 1982年 / 25卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.25.6511
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6511 / 6513
页数：3
相关论文
共 50 条
  • [31] OPTICAL MODELING OF SI-SIO2 INTERFACE
    KALNITSKY, A
    TAY, SP
    ELLUL, JP
    CHOGSAWANGVIROD, S
    IRENE, EA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C362 - C363
  • [32] TRANSITION RATE OF ELECTRON TUNNELLING INTO SI-SIO2 INTERFACE STATES
    JAIN, S
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (09) : 963 - 965
  • [33] IMPROVED CHARACTERIZATION OF THE SI-SIO2 INTERFACE
    SU, P
    SHER, A
    TSUO, YH
    MORIARTY, JA
    MILLER, WE
    APPLIED PHYSICS LETTERS, 1980, 36 (12) : 991 - 993
  • [34] Precipitation of Fe at the Si-SiO2 interface
    Wong-Leung, J.
    Eaglesham, D.J.
    Sapjeta, J.
    Jacobson, D.C.
    Poate, J.M.
    Williams, J.S.
    Journal of Applied Physics, 1998, 83 (01):
  • [35] Structure and energetics of the Si-SiO2 interface
    Tu, Y
    Tersoff, J
    PHYSICAL REVIEW LETTERS, 2000, 84 (19) : 4393 - 4396
  • [36] CHEMISTRY AND MORPHOLOGY OF THE SI-SIO2 INTERFACE
    HELMS, CR
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1980, 179 (MAR): : 5 - COLL
  • [37] CAPTURE OF HOLES AT THE SI-SIO2 INTERFACE
    BARABAN, AP
    TARANTOV, YA
    BULAVINOV, VV
    KONOROV, PP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (07): : 825 - 826
  • [38] CARBON IMPURITIES AT A SI-SIO2 INTERFACE
    RAIDER, SI
    MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) : 29 - 34
  • [39] MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE
    JACCODINE, RJ
    SCHLEGEL, WA
    JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2429 - +
  • [40] MECHANICAL STRESSES ON THE SI-SIO2 INTERFACE
    SOKOLOV, VI
    FEDOROVICH, NA
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1987, 99 (01): : 151 - 158
12345