POSSIBILITY OF INTRINSIC SI GAP STATES LOCALIZED AT THE SI-SIO2 INTERFACE

被引：9

|

作者：

MARTINEZ, E

YNDURAIN, F

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.25.6511

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：6511 / 6513

页数：3

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