共 50 条
- [31] GALVANOMAGNETIC PROPERTIES OF N-TYPE CDXHG1-XTE AFTER A METAL-INSULATOR-TRANSITION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (08): : 915 - 918
- [32] INFLUENCE OF PLASTIC-DEFORMATION ON GALVANOMAGNETIC AND PHOTOELECTRIC PROPERTIES OF N-TYPE CDXHG1-XTE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (01): : 73 - 75
- [34] CHARACTERISTICS OF THE BEHAVIOR OF INDIUM IMPLANTED IN N-TYPE CDXHG1-XTE SINGLE-CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (03): : 353 - 354
- [36] Photosensitization of CdxHg1-xTe epitaxial films by laser-induced shock wave FOURTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 1999, 3890 : 458 - 463
- [38] STRUCTURE OF CDXHG1-XTE EPITAXIAL LAYER WITH A GRADIENT OF COMPOSITION ACTA CRYSTALLOGRAPHICA SECTION A, 1978, 34 : S206 - S207