共 50 条
- [1] INFLUENCE OF PLASTIC-DEFORMATION ON GALVANOMAGNETIC AND PHOTOELECTRIC PROPERTIES OF N-TYPE CDXHG1-XTE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (01): : 73 - 75
- [2] NATURE OF A MAGNETIC-FIELD-INDUCED METAL-INSULATOR TRANSITION IN N-TYPE CDXHG1-XTE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (05): : 566 - 568
- [4] PHOTOLUMINESCENCE OF EPITAXIAL N-TYPE CDXHG1-XTE FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (09): : 1052 - 1053
- [5] IMPURITY RADIATIVE RECOMBINATION IN N-TYPE CDXHG1-XTE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (06): : 638 - 642
- [6] ELECTRON SPECIFIC-HEAT OF CDXHG1-XTE NEAR A METAL-INSULATOR-TRANSITION IN A MAGNETIC-FIELD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (06): : 678 - 681
- [8] PHOTOELECTRIC EFFECTS IN N-TYPE CDXHG1-XTE SUBJECTED TO UNIAXIAL DEFORMATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1225 - 1229
- [9] RECOMBINATION IN N-TYPE CDXHG1-XTE CRYSTALS UNDER SURFACE EXCITATION UKRAINSKII FIZICHESKII ZHURNAL, 1980, 25 (03): : 434 - 441
- [10] INFLUENCE OF GROWTH DISLOCATIONS ON THE ELECTRON LIFETIME IN N-TYPE CDXHG1-XTE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (03): : 280 - 282