GALVANOMAGNETIC PROPERTIES OF N-TYPE CDXHG1-XTE AFTER A METAL-INSULATOR-TRANSITION

被引：0
|
作者：
ARONZON, BA
KOPYLOV, AV
MEILIKHOV, EZ
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1986年 / 20卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：915 / 918
页数：4
相关论文
共 50 条
  • [41] The method for calculation of carrier concentration in narrow-gap n-type doped CdxHg1-xTe structures
    Jozwikowska, A.
    Jozwikowski, K.
    Suligowski, M.
    Moszczynski, P.
    Nietopiel, M.
    2016 INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD), 2016, : 61 - 62
  • [42] Corrosion properties of composite coats on CdxHg1-xTe
    Man'ko, V.S.
    Andreev, V.A.
    Khabibullin, I.Kh.
    Zakirova, E.A.
    Zashchita Metallov, 1995, 31 (02):
  • [43] THE PROPERTIES OF GOLD IN BRIDGMAN GROWN CDXHG1-XTE
    JONES, CL
    CAPPER, P
    QUELCH, MJT
    BROWN, M
    JOURNAL OF CRYSTAL GROWTH, 1983, 64 (03) : 417 - 432
  • [44] METAL-INSULATOR-TRANSITION IN IMPURITY BAND OF N-TYPE GAAS INDUCED BY LOSS OF DIMENSION
    PEPPER, M
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (08): : L173 - L177
  • [45] FIELD-EFFECT TRANSISTOR WITH A METAL TUNNEL INSULATOR SEMICONDUCTOR STRUCTURE BASED ON CDXHG1-XTE
    SALMIN, EA
    PONOMARENKO, VP
    STAFEEV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (06): : 722 - 724
  • [46] The band structure and the double metal-insulator-metal phase transition in the conductivity of elastically strained zero-gap CdxHg1-xTe
    Venger, E. F.
    Gasan-zade, S. G.
    Strikha, M. V.
    Shepelskii, G. A.
    SEMICONDUCTORS, 2007, 41 (03) : 266 - 271
  • [47] PHOTOELECTRIC PROPERTIES OF CDXHG1-XTE AT HIGH-TEMPERATURES
    VDOVKINA, EE
    BARYSHEV, NS
    SHCHETININ, MP
    CHERKASOV, AP
    AVERYANOV, IS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (01): : 109 - 110
  • [48] PHOTOELECTRIC PROPERTIES OF POLYCRYSTALLINE CDXHG1-XTE LAYERS ON SAPPHIRE
    VLASENKO, AI
    GNATYUK, VA
    KOPISHINSKAYA, EP
    LUKYANENKO, VI
    MOZOL, PE
    SUKACH, AV
    INORGANIC MATERIALS, 1995, 31 (10) : 1216 - 1218
  • [49] GALVANOMAGNETIC EFFECTS IN NARROW-GAP CDXHG1-XTE AT LIQUID-HELIUM TEMPERATURES
    BOVINA, LA
    SAVCHENKO, YN
    STAFEEV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 15 - 18
  • [50] Acoustodynamic influence on electronic properties of CdxHg1-xTe alloys
    Olikh, YM
    Savkina, RK
    Vlasenko, OI
    FOURTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 1999, 3890 : 542 - 547
12345