X-RAY TOPOGRAPHIC STUDIES OF DEFECTS IN SILICON INTRODUCED BY THERMAL OXIDATION

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作者：

SUGITA, Y

TOKUYAMA, T

KISHINO, S

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1966年 / 113卷 / 08期

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O646 [电化学、电解、磁化学];

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081704 ;

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页码：C216 / &

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