X-RAY TOPOGRAPHIC STUDIES OF DEFECTS IN SILICON INTRODUCED BY THERMAL OXIDATION

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作者：
SUGITA, Y
TOKUYAMA, T
KISHINO, S
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来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1966年 / 113卷 / 08期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
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页码：C216 / &
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