共 50 条
- [45] GROWTH OF PBTE/PB1-XMNXTE QUANTUM WELL STRUCTURES BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (06): : 3197 - 3199
- [47] SELECTIVE GROWTH OF INGAAS/INP LAYERS BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH ATOMIC-HYDROGEN IRRADIATION JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (11A): : L1627 - L1630
- [48] Selective Area Growth of InGaAs/InP Quantum Well Nanowires on SOI Substrate SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8, 2018, 86 (07): : 115 - 121
- [49] INGAALAS/INP TYPE-II MULTIPLE-QUANTUM-WELL STRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 : 391 - 396