共 50 条
- [33] MECHANISM OF GAAS SELECTIVE GROWTH IN AR+ LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (01): : L1 - L3
- [34] FABRICATION OF INGAAS WIRES BY PREFERENTIAL MOLECULAR-BEAM EPITAXY GROWTH ON CORRUGATED INP SUBSTRATE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 919 - 924
- [35] EFFECT OF STRAIN COMPENSATION ON CRYSTALLINE QUALITY FOR INGAAS/INALP STRAINED MULTIPLE-QUANTUM-WELL STRUCTURES ON INP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (2A): : L156 - L158
- [36] COMPACT METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH SYSTEM JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (05): : 2790 - 2794
- [38] Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 μm JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1463 - 1467