GAIN AND CARRIER LIFETIME MEASUREMENTS IN ALGAAS MULTIQUANTUM WELL LASERS

被引：9
|
作者：
DUTTA, NK
HARTMAN, RL
TSANG, WT
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 11期
关键词：
D O I：
10.1109/JQE.1983.1071771
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1613 / 1616
页数：4
相关论文
共 50 条
  • [21] Carrier density dependence of the lifetime of InGaAs/AlGaAs high power lasers
    Rinner, F
    Rogg, J
    Wiedmann, N
    Konstanzer, H
    Dammann, M
    Mikulla, M
    Poprawe, R
    Weimann, G
    TEST AND MEASUREMENT APPLICATIONS OF OPTOELECTRONIC DEVICES, 2002, 4648 : 1 - 8
  • [22] ANISTROPY AND BROADENING OF OPTICAL GAIN IN A GAAS/ALGAAS MULTIQUANTUM-WELL LASER.
    Yamada, Minoru
    Ogita, Shouichi
    Yamagishi, Masayuki
    Tabata, Kouichi
    IEEE Journal of Quantum Electronics, 1984, QE-21 (06) : 640 - 645
  • [23] LOW NONLINEAR GAIN IN INGAAS/INGAALAS SEPARATE CONFINEMENT MULTIQUANTUM WELL LASERS
    GRABMAIER, A
    HANGLEITER, A
    FUCHS, G
    WHITEAWAY, JEA
    GLEW, RW
    APPLIED PHYSICS LETTERS, 1991, 59 (23) : 3024 - 3026
  • [24] Improved theory for carrier leakage and diffusion in multiquantum-well semiconductor lasers
    Irikawa, M
    Ishikawa, T
    Fukushima, T
    Shimizu, H
    Kasukawa, A
    Iga, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (4A): : 1730 - 1737
  • [25] MINORITY-CARRIER LIFETIME MEASUREMENTS OF ALGAAS RED LEDS
    STERANKA, FM
    DEFEVERE, D
    CAMRAS, M
    RUDAZ, SL
    MCELFRESH, DK
    COOK, LW
    SNYDER, WL
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S16 - S16
  • [26] Interwell inhomogeneity of carrier injection in InGaN/GaN/AlGaN multiquantum well lasers
    Domen, K
    Soejima, R
    Kuramata, A
    Horino, K
    Kubota, S
    Tanahashi, T
    APPLIED PHYSICS LETTERS, 1998, 73 (19) : 2775 - 2777
  • [27] Carrier profile for In0.35Ga0.65As/GaAs multiquantum well lasers from capacitance-voltage measurements
    Arias, J
    Esquivias, I
    Ralston, JD
    Larkins, EC
    Weisser, S
    Rosenzweig, J
    Schonfelder, A
    Maier, M
    APPLIED PHYSICS LETTERS, 1996, 68 (08) : 1138 - 1140
  • [28] TRUE CARRIER LIFETIME MEASUREMENTS OF SEMICONDUCTOR-LASERS
    SHTENGEL, GE
    ACKERMAN, DA
    MORTON, PA
    ELECTRONICS LETTERS, 1995, 31 (20) : 1747 - 1748
  • [29] LIFETIME BROADENING IN GAAS-ALGAAS QUANTUM-WELL LASERS
    KUCHARSKA, AI
    ROBBINS, DJ
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (03) : 443 - 448
  • [30] PERFORMANCE OF DRY-ETCHED SHORT CAVITY GAAS/ALGAAS MULTIQUANTUM-WELL LASERS
    YUASA, T
    YAMADA, T
    ASAKAWA, K
    ISHII, M
    UCHIDA, M
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1321 - 1327
12345