PERFORMANCE OF DRY-ETCHED SHORT CAVITY GAAS/ALGAAS MULTIQUANTUM-WELL LASERS

被引:10
|
作者
YUASA, T [1 ]
YAMADA, T [1 ]
ASAKAWA, K [1 ]
ISHII, M [1 ]
UCHIDA, M [1 ]
机构
[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
关键词
D O I
10.1063/1.339958
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1321 / 1327
页数:7
相关论文
共 50 条
  • [1] FABRICATION OF DRY-ETCHED CAVITY GAAS/ALGAAS MULTIQUANTUM-WELL LASERS WITH HIGH SPATIAL UNIFORMITY
    YAMADA, T
    YUASA, T
    ASAKAWA, K
    SHIMAZU, M
    ISHII, M
    UCHIDA, M
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) : 2286 - 2290
  • [2] VERY HIGH RELAXATION OSCILLATION FREQUENCY IN DRY-ETCHED SHORT CAVITY GAAS/ALGAAS MULTIQUANTUM WELL LASERS
    YUASA, T
    YAMADA, T
    ASAKAWA, K
    ISHII, M
    UCHIDA, M
    APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1122 - 1124
  • [3] SHORT CAVITY GAAS/ALGAAS MULTIQUANTUM WELL LASERS BY DRY ETCHING
    YUASA, T
    YAMADA, T
    ASAKAWA, K
    SUGATA, S
    ISHII, M
    UCHIDA, M
    APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1007 - 1009
  • [4] DRY-ETCHED-CAVITY PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS
    YUASA, T
    MANNOH, M
    ASAKAWA, K
    SHINOZAKI, K
    ISHII, M
    APPLIED PHYSICS LETTERS, 1986, 48 (12) : 748 - 750
  • [5] GAAS/ALGAAS MULTIQUANTUM-WELL VERTICAL-CAVITY TUNABLE PHOTODETECTOR
    LAI, K
    HANSING, C
    STREETMAN, BG
    CAMPBELL, JC
    LEAVITT, R
    SIMONIS, G
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) : 8204 - 8205
  • [6] LOW-THRESHOLD MBE GAAS/ALGAAS QUANTUM WELL LASERS WITH DRY-ETCHED MIRRORS
    MANNOH, M
    YUASA, T
    ASAKAWA, K
    SHINOZAKI, K
    ISHII, M
    ELECTRONICS LETTERS, 1985, 21 (17) : 769 - 770
  • [7] LOW-THRESHOLD MBE GAAS-ALGAAS QUANTUM WELL LASERS WITH DRY-ETCHED MIRRORS
    MANNOH, M
    YUASA, T
    ASAKAWA, K
    NARITSUKA, S
    SHINOZAKI, K
    ISHII, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2540 - 2540
  • [8] INDEX-GUIDED MULTIQUANTUM-WELL ALGAAS LASERS
    AMBROSIUS, HPMM
    BOERRIGTERLAMMERS, HJM
    HAGEN, SH
    BOERMANS, M
    CHANG, M
    ACKET, GA
    PHILIPS JOURNAL OF RESEARCH, 1990, 45 (3-4) : 165 - 175
  • [9] ALGAAS/GAAS BURIED MULTIQUANTUM WELL LASERS WITH A REACTIVE ION ETCHED WINDOW FACET
    SEMURA, S
    OHTA, T
    KURODA, T
    NAKASHIMA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L463 - L465
  • [10] Effect of the doping level of a p-cladding layer on the performance of GaAs-AlGaAs multiquantum-well lasers
    Chelny, AA
    Kobyakova, MS
    Eliseev, PG
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2004, 40 (02) : 113 - 117