DETERMINATION OF ELECTRICAL AND OPTICAL-PARAMETERS OF GA1-XINXASYSB1-Y AND GA1-XALXASYSB1-Y THIN-LAYERS GROWN ON GASB SUBSTRATES BY IR REFLECTIVITY

被引：10
|
作者：
MEZERREG, A
LLINARES, C
LAZZARI, JL
MONTANER, A
机构：
[1] UNIV MONTPELLIER 2, EQUIPE MICROOPTOELECTR MONTPELLIER, CNRS, URA 392, F-34095 MONTPELLIER 05, FRANCE
[2] UNIV MONTPELLIER 2, DYNAM PHASES CONDENSEES GRP, F-34095 MONTPELLIER, FRANCE
来源：
THIN SOLID FILMS | 1992年 / 221卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(92)90814-R
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
IR (40-400 cm-1) reflectivity measurements have been made on thin layers of the quaternary alloys Ga1-xInxAsySb1-y and Ga1-xAlxAsySb1-y grown by the liquid phase epitaxy (LPE) technique and lattice matched to GaSb 'substrates. The electrical and vibrational parameters have been determined simultaneously by fitting an appropriate theoretial model to the experimental reflectivity data. The results obtained are in substantial agreement with those reported in the literature for similar compositions. The substrate parameter values are also found to be close to those given by electrical measurements before layer growth.
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页码：196 / 202
页数：7
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