DETERMINATION OF ELECTRICAL AND OPTICAL-PARAMETERS OF GA1-XINXASYSB1-Y AND GA1-XALXASYSB1-Y THIN-LAYERS GROWN ON GASB SUBSTRATES BY IR REFLECTIVITY

被引：10
|
作者：
MEZERREG, A
LLINARES, C
LAZZARI, JL
MONTANER, A
机构：
[1] UNIV MONTPELLIER 2, EQUIPE MICROOPTOELECTR MONTPELLIER, CNRS, URA 392, F-34095 MONTPELLIER 05, FRANCE
[2] UNIV MONTPELLIER 2, DYNAM PHASES CONDENSEES GRP, F-34095 MONTPELLIER, FRANCE
来源：
THIN SOLID FILMS | 1992年 / 221卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(92)90814-R
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
IR (40-400 cm-1) reflectivity measurements have been made on thin layers of the quaternary alloys Ga1-xInxAsySb1-y and Ga1-xAlxAsySb1-y grown by the liquid phase epitaxy (LPE) technique and lattice matched to GaSb 'substrates. The electrical and vibrational parameters have been determined simultaneously by fitting an appropriate theoretial model to the experimental reflectivity data. The results obtained are in substantial agreement with those reported in the literature for similar compositions. The substrate parameter values are also found to be close to those given by electrical measurements before layer growth.
引用
收藏
页码：196 / 202
页数：7
相关论文
共 50 条
  • [21] Liquid phase epitaxy growth and characterization of Ga1-xInxAsySb1-y quaternary alloys
    Rakovics, V
    Tóth, AL
    Podör, B
    Frigeri, C
    Balázs, J
    Horváth, ZE
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 83 - 86
  • [22] PECULIARITIES OF DISLOCATION-STRUCTURE FORMATION IN EPITAXIAL LAYERS OF SOLID-SOLUTIONS GA1-XINXASYSB1-Y
    BOCHKARYOV, AE
    DRUZHININA, LV
    KRASILNIKOV, VS
    LEBEDEV, SN
    YUGOVA, TG
    KRISTALLOGRAFIYA, 1989, 34 (01): : 176 - 181
  • [23] THEORETICAL-STUDY OF LONG-WAVELENGTH LASER OPERATION IN GA1-XALXASYSB1-Y
    TAKESHIMA, M
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (09) : 2502 - 2506
  • [24] Raman scattering determination of the energy difference between Γ and L conduction band minima in Ga1-xInxAsySb1-y
    Cusco, R.
    Ibanez, J.
    Artus, L.
    APPLIED PHYSICS LETTERS, 2010, 97 (09)
  • [25] Lattice vibrations study of Ga1-xInxAsySb1-y quaternary alloys with low (In, As) content grown by liquid phase epitaxy
    Olvera-Hernandez, J.
    Olvera-Cervantes, J.
    Rojas-Lopez, M.
    Navarro-Contreras, H.
    Vidal, M. A.
    de Anda, F.
    INTERNATIONAL CONFERENCE ON MATERIALS FOR ADVANCED TECHNOLOGIES (ICMAT 2005), 2006, 28 : 147 - +
  • [26] GROWTH AND CHARACTERIZATION OF METAL-ORGANIC VAPOR-PHASE EPITAXIAL GA1-XINXASYSB1-Y QUATERNARY LAYERS
    GIANI, A
    BOUGNOT, J
    PASCALDELANNOY, F
    BOUGNOT, G
    KAOUKAB, J
    ALLOGHO, GG
    BOW, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (1-3): : 121 - 124
  • [27] ENERGY AND EMISSION SPECTRA OF THE Ga1-xInxAsySb1-y/AlxGa1-xAsySb1-y MULTIPLE-QUANTUM-WELL HETEROSTRUCTURES
    Manak, I. S.
    Ushakov, D. V.
    Bialiausky, U. S.
    CAOL 2008: PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE ON ADVANCED OPTOELECTRONICS AND LASERS, 2008, : 285 - 287
  • [28] Long-wavelength photodiodes based on Ga1-xInxAsySb1-y with composition near the miscibility boundary
    Andreev, IA
    Kunitsyna, EV
    Mikhailova, MP
    Yakovlev, YP
    SEMICONDUCTORS, 1999, 33 (02) : 216 - 220
  • [29] Engineering of Ga1-xInxAsySb1-y/GaSb quantum well for III-V based devices emitting near 2.7 μm
    Jdidi, A.
    Sfina, N.
    Said, M.
    Lazzari, J. -L.
    2ND INTERNATIONAL CONFERENCE ON MATERIALS PHYSICS AND APPLICATIONS (JIPMA 2009/MATERIAUX 2009), 2010, 13
  • [30] High-quality Ga1-xInxAsySb1-y quaternary layers grown from antimonide-rich solutions by liquid-phase epitaxy
    Wang, JM
    Sun, YM
    Wu, MC
    JOURNAL OF CRYSTAL GROWTH, 1997, 172 (3-4) : 514 - 520
12345