PROFILING OF STRESS-INDUCED INTERFACE STATES IN SHORT CHANNEL MOSFETS USING A COMPOSITE CHARGE PUMPING TECHNIQUE

被引：25
|
作者：
HADDARA, H
CRISTOLOVEANU, S
机构：
来源：
SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 08期
关键词：
D O I：
10.1016/0038-1101(86)90177-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：767 / 772
页数：6
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