A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs

被引：22
|
作者：
Mahapatra, S [1 ]
Parikh, CD
Vasi, J
Rao, VR
Viswanathan, CR
机构：
[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India
[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA USA
来源：
SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 05期
关键词：
D O I：
10.1016/S0038-1101(98)00326-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new charge pumping (CP) technique is proposed to obtain the spatial profile of interface-state density (N-it) and oxide charges (N-ot) near the drain junction of hot-carrier stressed MOSFETs. Complete separation of N-it from N-ot is achieved by using a direct noniterative method. The pre-stress CP edge is corrected for the charges associated with both the generated N-it and N-ot. A closed form model is developed to predict the stress-induced incremental CP current. The damage distributions are obtained after fitting the model with experimental data. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：915 / 922
页数：8
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