A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs

被引：22
|
作者：
Mahapatra, S [1 ]
Parikh, CD
Vasi, J
Rao, VR
Viswanathan, CR
机构：
[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India
[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA USA
来源：
SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 05期
关键词：
D O I：
10.1016/S0038-1101(98)00326-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new charge pumping (CP) technique is proposed to obtain the spatial profile of interface-state density (N-it) and oxide charges (N-ot) near the drain junction of hot-carrier stressed MOSFETs. Complete separation of N-it from N-ot is achieved by using a direct noniterative method. The pre-stress CP edge is corrected for the charges associated with both the generated N-it and N-ot. A closed form model is developed to predict the stress-induced incremental CP current. The damage distributions are obtained after fitting the model with experimental data. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：915 / 922
页数：8
相关论文
共 50 条
  • [41] An analytical threshold voltage model of NMOSFETs with hot-carrier induced interface charge effect
    Ho, CS
    Huang, KY
    Tang, M
    Liou, JJ
    MICROELECTRONICS RELIABILITY, 2005, 45 (7-8) : 1144 - 1149
  • [42] Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges
    Djeffal, F.
    Ghoggali, Z.
    Dibi, Z.
    Lakhdar, N.
    MICROELECTRONICS RELIABILITY, 2009, 49 (04) : 377 - 381
  • [43] Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
    Chan, DSH
    Leang, SE
    Chim, WK
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (09) : 976 - 980
  • [44] A new observation of hot-carrier induced interface traps spatial distribution in 0.135μm n-MOSFET by gate-diode
    Zhao, Y
    Xu, MZ
    Tan, CH
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 839 - 842
  • [45] CHANNEL HOT-CARRIER STRESSING OF REOXIDIZED NITRIDED OXIDE P-MOSFETS
    DUNN, GJ
    KRICK, JT
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (04) : 901 - 906
  • [46] THE EFFECT OF CHANNEL HOT-CARRIER STRESSING ON GATE-OXIDE INTEGRITY IN MOSFETS
    CHEN, IC
    CHOI, JY
    CHAN, TY
    HU, CM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2253 - 2258
  • [47] Modeling of interface defect distribution for an n-MOSFETs under hot-carrier stressing
    Marrakh, R.
    Bouhdada, A.
    Active and Passive Electronic Components, 2000, 23 (03) : 137 - 144
  • [48] Energy levels of interface states generated in n-MOSFETs by hot-carrier stresses
    Xu, JP
    Lai, PT
    Cheng, YC
    SOLID-STATE ELECTRONICS, 2000, 44 (03) : 527 - 534
  • [49] Direct lateral profiling of both interface traps and oxide charge in thin gate MOSFET devices
    Chen, C
    Ma, TP
    1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1996, : 230 - 231
  • [50] A STUDY OF HOT-CARRIER DEGRADATION IN NMOSFETS BY GATE CAPACITANCE AND CHARGE-PUMPING CURRENT
    LING, CH
    TAN, SE
    ANG, DS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (07) : 1321 - 1328
12345