TRANSIENT-RESPONSE MEASUREMENT OF KINK EFFECT IN INALAS/INGAAS/INP HEMTS

被引：5
|
作者：
KRUPPA, W [1 ]
BOOS, JB [1 ]
机构：
[1] SFA INC,LANDOVER,MD 20785
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 04期
关键词：
HIGH ELECTRON MOBILITY TRANSISTORS; TRANSIENT RESPONSE;
D O I：
10.1049/el:19940037
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The kink effect in InAlAs/InGaAs/InP HEMTs is examined in the time domain with the use of voltage pulses applied to the drain of the device. The transient response shows opposite slopes below and above the kink voltage associated with carrier capture and emission. The results are found to be consistent with frequency-domain dispersion measurements made on the output resistance. The causes and time constants of the transients are discussed.
引用
收藏
页码：368 / 369
页数：2
相关论文
共 50 条
  • [41] A self-consistent model for small-signal parameters and noise performance of InAlAs/InGaAs/InAlAs/InP HEMTs
    Liu, KW
    Anwar, AFM
    SOLID-STATE ELECTRONICS, 2003, 47 (05) : 763 - 768
  • [42] 45Gbit/s decision IC module using InAlAs/InGaAs/InP HEMTs
    Murata, K
    Otsuji, T
    Yamane, Y
    ELECTRONICS LETTERS, 1999, 35 (16) : 1379 - 1380
  • [43] 50-Gbit/s demultiplexer IC module using InAlAs/InGaAs/InP HEMTs
    Sano, K
    Murata, K
    Yamane, Y
    IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (11) : 1786 - 1788
  • [44] 30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates
    Suemitsu, T
    Ishii, T
    Yokoyama, H
    Umeda, Y
    Enoki, T
    Ishii, Y
    Tamamura, T
    INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 223 - 226
  • [45] Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs
    Sun, Shu-Xiang
    Wei, Zhi-Chao
    Xia, Peng-Hui
    Wang, Wen-Bin
    Duan, Zhi-Yong
    Li, Yu-Xiao
    Zhong, Ying-Hui
    Ding, Peng
    Jin, Zhi
    CHINESE PHYSICS B, 2018, 27 (02)
  • [46] Elimination of kink effects in InAlAs/InGaAs InP-based HEMT's by means of InP etch stop layer
    Meneghesso, G
    Perin, E
    Canali, C
    Zanoni, E
    COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 219 - 224
  • [47] Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs
    孙树祥
    魏志超
    夏鹏辉
    王文斌
    段智勇
    李玉晓
    钟英辉
    丁芃
    金智
    Chinese Physics B, 2018, 27 (02) : 629 - 633
  • [48] Effect of atmosphere on reliability of passivated 0.15 μm InAlAs/InGaAs HEMTs
    Dammann, M
    Chertouk, M
    Jantz, W
    Kohler, K
    Schmidt, KH
    Weimann, G
    ELECTRONICS LETTERS, 1998, 34 (21) : 2064 - 2066
  • [49] Dependence of sidegating effect in InAlAs/InGaAs HEMTs upon impact ionization
    Berthelemot, C
    Vigier, P
    Dumas, JM
    Clei, A
    Palla, R
    Harmand, JC
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 674 - 677
  • [50] A slow-trap model for the kink effect on InAlAs/InP HFET
    Georgescu, B
    Souifi, A
    Post, G
    Guillot, G
    1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 173 - 176
12345